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Photomicrosensor (Reflective)
EE-SY193
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
I Features
? Ultra-compact model.
? PCB surface mounting type.
? RoHS Compliant.
I Absolute Maximum Ratings (Ta = 25 ° C)
Item
Symbol Rated value
Emitter
Forward current
I F
25 mA (see note 1)
Pulse forward current I FP
100 mA (see note 2)
Reverse voltage
Detector Collector–Emitter
voltage
Emitter–Collector
voltage
V R
V CEO
V ECO
6V
18 V
4V
Internal Circuit
Recommended
soldering patterns
Collector current I C
Collector dissipation P C
20 mA
75 mW (see note 1)
C
A
Ambient
Operating
Topr
– 30 ° C to 80 ° C
temperature Storage
Tstg
– 40 ° C to 85 ° C
E
K
Reflow soldering
Manual soldering
Tsol 220 ° C (see note 3)
Tsol 300 ° C (see note 3)
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Unless otherwise specified, the
tolerances are ± 0.2 mm.
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 ° C.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
and within 3 seconds for manual soldering.
I Ordering Information
Description
Model
Photomicrosensor (reflective)
EE-SY193
I Electrical and Optical Characteristics (Ta = 25 ° C)
Item
Symbol
Value
Condition
Emitter
Detector
Forward voltage
Reverse current
Peak emission wavelength
Light current
V F
I R
λ P
I L
1.1 V typ., 1.3 V max.
10 μ A max.
940 nm typ.
100 μ A min., 150 μ A typ.,
360 μ A max.
I F = 4 mA
V R = 6 V
I F = 20 mA
Aluminum-deposited surface,
I F = 4 mA, V CE = 2 V, d = 1 mm
(see note)
Dark current
Leakage current
Collector–Emitter saturated
I D
I LEAK
V CE (sat)
100 nA max.
1 μ A max.
---
V CE = 10 V, 0 l x
I F = 4 mA, V CE = 2 V
---
voltage
Peak spectral sensitivity
λ P
900 nm typ.
---
wavelength
Rising time
Falling time
tr
tf
25 μ s typ.
30 μ s typ.
V CC = 2 V, R L = 1 k ? ,
V CC = 2 V, R L = 1 k ? ,
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
302
Photomicrosensor (Reflective) EE-SY193
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